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RFD12N06RLESM
Typical Performance Curves
(Continued)
1.2
V GS = V DS , I D = 250 μ A
1.2
I D = 250 μ A
1.0
1.1
0.8
1.0
0.6
0.4
0.9
-80
-40
0 40 80 120 160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
2000
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
V DD = 30V
1000
C ISS = C GS + C GD
8
6
100
C OSS ? C DS + C GD
4
WAVEFORMS IN
DESCENDING ORDER:
2
I D = 17A
I D = 12A
V GS = 0V, f = 1MHz
C RSS = C GD
0
I D = 7A
10
0.1
1.0
10
60
0
3
6 9
Q g , GATE CHARGE (nC)
12
15
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
150
V GS = 4.5V, V DD = 30V, I D = 8A
120
t r
90
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
100
V GS = 10V, V DD = 30V, I D = 18A
80
60
60
30
t f
t d(OFF)
t d(ON)
40
20
t f
t d(OFF)
t r
t d(ON)
0
0
0
10
20
30
40
50
0
10 20 30 40
50
R GS , GATE TO SOURCE RESISTANCE ( ? )
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
?2002 Fairchild Semiconductor Corporation
R GS , GATE TO SOURCE RESISTANCE ( ? )
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
RFD12N06RLESM Rev. C0
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